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| 2SB647 / 2SB647A PNP General Purpose Transistors P b Lead(Pb)-Free 3 2 2 3 1.EMITTER 3.BASE 2.COLLECTOR 1 1 TO-92MOD MAXIMUM RATINGS(Ta=25C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 80 120 5.0 1000 900 +150 -55 to +150 Unit V V V mA mW C C WEITRON http://www.weitron.com.tw 1/5 09-Dec-08 2SB647 / 2SB647A ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage 2SB647 V(BR)CEO 2SB647A Emitter-base breakdown voltage Collector cut-off current 2SB647 2SB647A DC current gain hFE(2) Collector-emitter saturation voltage Transition frequency VCEsat VCE=-5 V, IC= -500mA IC=-500mA, IB=-50mA VCE=-5V, IC= -150mA VCE=-10V, IE=0 f=1 MHz 30 140 -1 V MHz V(BR)EBO ICBO hFE(1)* IE= -10? A, IC=0 VCB= -100 V, IE=0 VCE=-5 V, IC= -150mA IC=-1mA , IB=0 Symbol V(BR)CBO Test conditions MIN -120 -80 -100 -5 60 60 MAX -10 320 200 UNIT V V V ?A - Ic= -10? A , IE=0 fT Cob Output capacitance 20 pF CLASSIFICATION OF hFE Rank 2SB647 Range 2SB647A 60-120 100-200 B 60-120 C 100-200 D 160-320 WEITRON http://www.weitron.com.tw 2/5 09-Dec-08 2SB647 / 2SB647A Typical Characteristics WEITRON http://www.weitron.com.tw 3/5 09-Dec-08 2SB647 / 2SB647A WEITRON http://www.weitron.com.tw 4/5 09-Dec-08 2SB647 / 2SB647A TO-92MOD Outline Dimensions G unit:mm TO-92MOD J D C K L Dim A B C D E G J K L M M in M ax 4.70 5.10 1.73 2.03 0.40 0.60 0.90 1.10 0.40 0.50 5.80 6.20 8.40 8.80 1.50Typ 2.90 3.10 12.20 13.45 B M WEITRON http://www.weitron.com.tw E A 5/5 09-Dec-08 |
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